DTA123JKAT246 vs MMUN2114LT1G feature comparison

DTA123JKAT246 ROHM Semiconductor

Buy Now Datasheet

MMUN2114LT1G onsemi

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD ONSEMI
Part Package Code SOT-23 SOT-23 (TO-236) 3 LEAD
Package Description SMALL OUTLINE, R-PDSO-G3 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN
Pin Count 3 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer ROHM Semiconductor onsemi
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21 BUILT-IN BIAS RESISTOR RATIO 0.21
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e1 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Manufacturer Package Code 318-08
Factory Lead Time 34 Weeks
JEDEC-95 Code TO-236AB
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 0.4 W

Compare DTA123JKAT246 with alternatives

Compare MMUN2114LT1G with alternatives