DTB113ZCHZGT116
vs
DTB123YCHZGT116
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ROHM CO LTD
|
ROHM CO LTD
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2016-07-15
|
2016-07-15
|
| Samacsys Manufacturer |
ROHM Semiconductor
|
ROHM Semiconductor
|
| Additional Feature |
BUILT IN BIAS RESISTANCE RATIO IS 10
|
BUILT IN BIAS RESISTANCE RATIO IS 4.5
|
| Collector Current-Max (IC) |
0.5 A
|
0.5 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
56
|
56
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Reference Standard |
AEC-Q101
|
AEC-Q101
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
Tin (Sn)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
10
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare DTB113ZCHZGT116 with alternatives
Compare DTB123YCHZGT116 with alternatives