DTC044EEBTL vs RN1308(TE85L,F) feature comparison

DTC044EEBTL ROHM Semiconductor

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RN1308(TE85L,F) Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD TOSHIBA CORP
Package Description ROHS COMPLIANT, EMT3F, SC-89, 3 PIN SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 2.14
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-F3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type NPN NPN
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Power Dissipation-Max (Abs) 0.1 W

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Compare RN1308(TE85L,F) with alternatives