DTC114EU3T106 vs DTC114TU3T106 feature comparison

DTC114EU3T106 ROHM Semiconductor

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DTC114TU3T106 ROHM Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer ROHM Semiconductor ROHM Semiconductor
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1.0 BUILT IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 100
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.2 W 0.2 W
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Date Of Intro 2018-04-23
Collector-Emitter Voltage-Max 50 V
VCEsat-Max 0.3 V

Compare DTC114EU3T106 with alternatives

Compare DTC114TU3T106 with alternatives