DTC114GVATV2
vs
RN1117MFV(TL3PAV)
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ROHM CO LTD
|
TOSHIBA CORP
|
| Package Description |
IN-LINE, R-PSIP-T3
|
SMALL OUTLINE, R-PDSO-F3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT-IN BIAS RESISTOR
|
BUILT IN BIAS RESISTANCE RATIO IS 0.47
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JESD-30 Code |
R-PSIP-T3
|
R-PDSO-F3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
FLAT
|
| Terminal Position |
SINGLE
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
250 MHz
|
| VCEsat-Max |
0.3 V
|
|
| Base Number Matches |
1
|
1
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare DTC114GVATV2 with alternatives
Compare RN1117MFV(TL3PAV) with alternatives