DTC114YE
vs
PDTC114YMB
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
NEXPERIA
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT IN BIAS RESISTANCE RATIO IS 4.7
|
BUILT IN BIAS RESISTANCE RATIO IS 4.7
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
68
|
100
|
| JESD-30 Code |
R-PDSO-G3
|
R-PBCC-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
NO LEAD
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
230 MHz
|
| Base Number Matches |
14
|
2
|
| Package Description |
|
CHIP CARRIER, R-PBCC-N3
|
| Date Of Intro |
|
2017-02-01
|
| Case Connection |
|
COLLECTOR
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Reference Standard |
|
AEC-Q101; IEC-60134
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare DTC114YE with alternatives
Compare PDTC114YMB with alternatives