DTC114YETR vs PDTC114YMB feature comparison

DTC114YETR ROHM Semiconductor

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PDTC114YMB NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ROHM CO LTD NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006B-3, 3 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 0.07 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 100
JESD-30 Code R-PDSO-G3 R-PBCC-N3
JESD-609 Code e1 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN SILVER COPPER TIN
Terminal Form GULL WING NO LEAD
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 230 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 2
Moisture Sensitivity Level 1
Reference Standard AEC-Q101; IEC-60134

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