DTC114YUAT107 vs DTC114EU3T106 feature comparison

DTC114YUAT107 ROHM Semiconductor

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DTC114EU3T106 ROHM Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7 BUILT IN BIAS RESISTOR RATIO IS 1.0
Collector Current-Max (IC) 0.07 A 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 30
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e1 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN SILVER COPPER Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Factory Lead Time 18 Weeks
Samacsys Manufacturer ROHM Semiconductor
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 0.2 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare DTC114YUAT107 with alternatives

Compare DTC114EU3T106 with alternatives