DTC143ZCAT116 vs RN1406(TE85R) feature comparison

DTC143ZCAT116 ROHM Semiconductor

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RN1406(TE85R) Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROHM CO LTD TOSHIBA CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.75
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 10 BUILT-IN BIAS RESISTOR RATIO IS 0.1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e1
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 3
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3

Compare DTC143ZCAT116 with alternatives

Compare RN1406(TE85R) with alternatives