DTC144EUA vs DTC124XEFRATL feature comparison

DTC144EUA Galaxy Microelectronics

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DTC124XEFRATL ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD ROHM CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 2.1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 68
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 3 1
Package Description SMALL OUTLINE, R-PDSO-G3
Samacsys Manufacturer ROHM Semiconductor
Moisture Sensitivity Level 1
Reference Standard AEC-Q101

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