DU2880T
vs
BLF147
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
TE CONNECTIVITY LTD
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00.75
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
65 V
|
65 V
|
| Drain Current-Max (ID) |
16 A
|
25 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
32 pF
|
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
| JESD-30 Code |
O-CRFM-F6
|
O-CRFM-F4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
6
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
206 W
|
220 W
|
| Power Gain-Min (Gp) |
13 dB
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
RADIAL
|
RADIAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
3
|
| Pbfree Code |
|
Yes
|
| Package Description |
|
CERAMIC PACKAGE-4
|
| Pin Count |
|
4
|
| Case Connection |
|
ISOLATED
|
| Drain-source On Resistance-Max |
|
0.15 Ω
|
| Power Dissipation-Max (Abs) |
|
220 W
|
|
|
|
Compare DU2880T with alternatives
Compare BLF147 with alternatives