EPC2104ENGR
vs
FDMS86101A
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Contact Manufacturer
|
Transferred
|
Ihs Manufacturer |
EFFICIENT POWER CONVERSION CORP
|
FAIRCHILD SEMICONDUCTOR CORP
|
Package Description |
UNCASED CHIP, R-XXUC-X75
|
ROHS COMPLIANT, POWER 56, 8 PIN
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
23 A
|
13 A
|
Drain-source On Resistance-Max |
0.0063 Ω
|
0.008 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-XXUC-X75
|
R-PDSO-F5
|
Number of Elements |
2
|
1
|
Number of Terminals |
75
|
5
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
UNCASED CHIP
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
165 A
|
180 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
UNSPECIFIED
|
FLAT
|
Terminal Position |
UNSPECIFIED
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
GALLIUM NITRIDE
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
QFN
|
Pin Count |
|
8
|
Manufacturer Package Code |
|
8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
|
HTS Code |
|
8541.29.00.95
|
Avalanche Energy Rating (Eas) |
|
486 mJ
|
Case Connection |
|
DRAIN
|
JEDEC-95 Code |
|
MO-240AA
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
104 W
|
Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare EPC2104ENGR with alternatives
Compare FDMS86101A with alternatives