EPC2104ENGR
vs
CSD19531Q5AT
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
EFFICIENT POWER CONVERSION CORP
|
TEXAS INSTRUMENTS INC
|
| Package Description |
UNCASED CHIP, R-XXUC-X75
|
SMALL OUTLINE, R-PDSO-F5
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
23 A
|
110 A
|
| Drain-source On Resistance-Max |
0.0063 Ω
|
0.0078 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-XXUC-X75
|
R-PDSO-N8
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
75
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
165 A
|
337 A
|
| Terminal Form |
UNSPECIFIED
|
NO LEAD
|
| Terminal Position |
UNSPECIFIED
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
GALLIUM NITRIDE
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| HTS Code |
|
8541.29.00.95
|
| Samacsys Manufacturer |
|
Texas Instruments
|
| Additional Feature |
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
|
180 mJ
|
| Case Connection |
|
DRAIN
|
| Feedback Cap-Max (Crss) |
|
16.9 pF
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare EPC2104ENGR with alternatives
Compare CSD19531Q5AT with alternatives