EPC2801
vs
SIR846DP-T1-GE3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
EFFICIENT POWER CONVERSION CORP
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
UNCASED CHIP, R-XXUC-X11
|
SOP-8
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
ULTRA LOW RESISTANCE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
25 A
|
20 A
|
| Drain-source On Resistance-Max |
0.007 Ω
|
0.0078 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-XXUC-X11
|
R-XDSO-C5
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
11
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
100 A
|
100 A
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
UNSPECIFIED
|
C BEND
|
| Terminal Position |
UNSPECIFIED
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
GALLIUM NITRIDE
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Samacsys Manufacturer |
|
Vishay
|
| Avalanche Energy Rating (Eas) |
|
61 mJ
|
| Case Connection |
|
DRAIN
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
104 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|