FDA16N50LDTU
vs
BUK9614-30
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ONSEMI
NXP SEMICONDUCTORS
Part Package Code
TO-3P-3L
Manufacturer Package Code
340BR
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
2 Days
Samacsys Manufacturer
onsemi
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
16.5 A
69 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e3
Number of Elements
1
1
Operating Temperature-Max
150 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
205 W
Surface Mount
NO
YES
Terminal Finish
Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
2
Package Description
SMALL OUTLINE, R-PSSO-G2
Additional Feature
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
125 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
30 V
Drain-source On Resistance-Max
0.014 Ω
JESD-30 Code
R-PSSO-G2
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Pulsed Drain Current-Max (IDM)
240 A
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare FDA16N50LDTU with alternatives
Compare BUK9614-30 with alternatives