FDB2670
vs
IRF642
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
D2PAK
|
SFM
|
Package Description |
D2PAK-3
|
TO-220, 3 PIN
|
Pin Count |
3
|
3
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
375 mJ
|
580 mJ
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
19 A
|
16 A
|
Drain-source On Resistance-Max |
0.13 Ω
|
0.22 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-220AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
93 W
|
125 W
|
Pulsed Drain Current-Max (IDM) |
40 A
|
64 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
5
|
1
|
HTS Code |
|
8541.29.00.95
|
Power Dissipation Ambient-Max |
|
125 W
|
Turn-off Time-Max (toff) |
|
140 ns
|
Turn-on Time-Max (ton) |
|
90 ns
|
|
|
|
Compare FDB2670 with alternatives
Compare IRF642 with alternatives