FDB7030BLL86Z vs FDB7030BL feature comparison

FDB7030BLL86Z Fairchild Semiconductor Corporation

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FDB7030BL Rochester Electronics LLC

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP ROCHESTER ELECTRONICS LLC
Package Description SMALL OUTLINE, R-PSSO-G2 TO-263AB, 3 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 220 mJ 73 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 60 A 60 A
Drain-source On Resistance-Max 0.009 Ω 0.009 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A 180 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Pbfree Code Yes
Rohs Code Yes
Part Package Code D2PAK
Pin Count 4
Additional Feature LOGIC LEVEL COMPATIBLE
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare FDB7030BLL86Z with alternatives

Compare FDB7030BL with alternatives