FDB9503L-F085 vs IPI120P04P4L-03 feature comparison

FDB9503L-F085 onsemi

Buy Now Datasheet

IPI120P04P4L-03 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes Yes
Part Life Cycle Code Lifetime Buy Obsolete
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Part Package Code TO-263 2L (D2PAK) TO-262AA
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 37 Weeks
Samacsys Manufacturer onsemi Infineon
Avalanche Energy Rating (Eas) 984 mJ 78 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 110 A 120 A
Drain-source On Resistance-Max 0.0026 Ω 0.0052 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-262AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL P-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - annealed TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
Rohs Code Yes
Package Description TO-262, 3 PIN
Pin Count 3
Additional Feature LOGIC LEVEL COMPATIBLE
Power Dissipation-Max (Abs) 136 W
Pulsed Drain Current-Max (IDM) 480 A

Compare FDB9503L-F085 with alternatives

Compare IPI120P04P4L-03 with alternatives