FDD3670
vs
IRF5M3710SCV
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
DPAK-3
|
HERMETIC SEALED PACKAGE-3
|
| Manufacturer Package Code |
369AS
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Avalanche Energy Rating (Eas) |
360 mJ
|
350 mJ
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
34 A
|
35 A
|
| Drain-source On Resistance-Max |
0.032 Ω
|
0.03 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252
|
TO-254AA
|
| JESD-30 Code |
R-PSSO-G2
|
S-MSFM-P3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1.6 W
|
|
| Pulsed Drain Current-Max (IDM) |
100 A
|
140 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
|
| Terminal Form |
GULL WING
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare FDD3670 with alternatives
Compare IRF5M3710SCV with alternatives