FDD4685 vs FDD4685_F085 feature comparison

FDD4685 Rochester Electronics LLC

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FDD4685_F085 onsemi

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Package Description DPAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown compliant
Avalanche Energy Rating (Eas) 121 mJ 121 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 8.4 A 32 A
Drain-source On Resistance-Max 0.042 Ω 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 100 A 100 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Manufacturer Package Code TO252A03
ECCN Code EAR99
Samacsys Manufacturer onsemi
Additional Feature ULTRA-LOW RESISTANCE
Feedback Cap-Max (Crss) 205 pF
JEDEC-95 Code TO-252AA
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 69 W
Reference Standard AEC-Q101
Transistor Application SWITCHING
Turn-off Time-Max (toff) 81 ns
Turn-on Time-Max (ton) 43 ns

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Compare FDD4685_F085 with alternatives