FDI8441 vs SPB80N04S2L-04 feature comparison

FDI8441 Fairchild Semiconductor Corporation

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SPB80N04S2L-04 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Part Package Code TO-262 TO-263
Package Description ROHS COMPLIANT PACKAGE-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Manufacturer Package Code 3LD, TO262, JEDEC VARIATION AA (I2PAK)
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 947 mJ 780 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.0047 Ω 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AB
JESD-30 Code R-PSIP-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 300 W 300 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Pulsed Drain Current-Max (IDM) 320 A

Compare FDI8441 with alternatives

Compare SPB80N04S2L-04 with alternatives