FDMS86101DC
vs
EPC2104ENGR
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Contact Manufacturer
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
EFFICIENT POWER CONVERSION CORP
|
Part Package Code |
QFN
|
|
Package Description |
ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
|
UNCASED CHIP, R-XXUC-X75
|
Pin Count |
8
|
|
Manufacturer Package Code |
8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Avalanche Energy Rating (Eas) |
216 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
14.5 A
|
23 A
|
Drain-source On Resistance-Max |
0.0075 Ω
|
0.0063 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
MO-240AA
|
|
JESD-30 Code |
R-PDSO-F5
|
R-XXUC-X75
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
2
|
Number of Terminals |
5
|
75
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
UNCASED CHIP
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
125 W
|
|
Pulsed Drain Current-Max (IDM) |
200 A
|
165 A
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
FLAT
|
UNSPECIFIED
|
Terminal Position |
DUAL
|
UNSPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
30
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
GALLIUM NITRIDE
|
Base Number Matches |
1
|
1
|
|
|
|
Compare FDMS86101DC with alternatives
Compare EPC2104ENGR with alternatives