FDN5618P
vs
FDN5618P_NL
feature comparison
| Rohs Code |
|
Yes
|
| Part Life Cycle Code |
|
Obsolete
|
| Ihs Manufacturer |
|
FAIRCHILD SEMICONDUCTOR CORP
|
| Part Package Code |
|
SOT
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
SUPERSOT
|
| Reach Compliance Code |
|
compliant
|
| ECCN Code |
|
EAR99
|
| Additional Feature |
|
ULTRA LOW RESISTANCE
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
60 V
|
| Drain Current-Max (ID) |
|
1.25 A
|
| Drain-source On Resistance-Max |
|
0.17 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Polarity/Channel Type |
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
0.5 W
|
| Pulsed Drain Current-Max (IDM) |
|
10 A
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Base Number Matches |
|
1
|
|
|
|