FF200R12KT3_E
vs
BSM200GB120DN2
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
SIEMENS A G
Part Package Code
MODULE
Package Description
FLANGE MOUNT, R-XUFM-X7
FLANGE MOUNT, R-CUFM-X7
Pin Count
7
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Case Connection
ISOLATED
ISOLATED
Collector Current-Max (IC)
295 A
290 A
Collector-Emitter Voltage-Max
1200 V
1200 V
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max
20 V
20 V
JESD-30 Code
R-XUFM-X7
R-CUFM-X7
Number of Elements
2
2
Number of Terminals
7
7
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1050 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UPPER
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
680 ns
550 ns
Turn-on Time-Nom (ton)
215 ns
110 ns
VCEsat-Max
2.15 V
3 V
Base Number Matches
1
3
HTS Code
8541.29.00.95
Fall Time-Max (tf)
120 ns
Gate-Emitter Thr Voltage-Max
6.5 V
Power Dissipation Ambient-Max
2800 W
Rise Time-Max (tr)
160 ns
Turn-off Time-Max (toff)
800 ns
Turn-on Time-Max (ton)
220 ns
Compare FF200R12KT3_E with alternatives
Compare BSM200GB120DN2 with alternatives