FF200R12KT3_E vs BSM200GB120DN2 feature comparison

FF200R12KT3_E Infineon Technologies AG

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BSM200GB120DN2 Siemens

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG SIEMENS A G
Part Package Code MODULE
Package Description FLANGE MOUNT, R-XUFM-X7 FLANGE MOUNT, R-CUFM-X7
Pin Count 7
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED ISOLATED
Collector Current-Max (IC) 295 A 290 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V 20 V
JESD-30 Code R-XUFM-X7 R-CUFM-X7
Number of Elements 2 2
Number of Terminals 7 7
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 1050 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 680 ns 550 ns
Turn-on Time-Nom (ton) 215 ns 110 ns
VCEsat-Max 2.15 V 3 V
Base Number Matches 1 3
HTS Code 8541.29.00.95
Fall Time-Max (tf) 120 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Power Dissipation Ambient-Max 2800 W
Rise Time-Max (tr) 160 ns
Turn-off Time-Max (toff) 800 ns
Turn-on Time-Max (ton) 220 ns

Compare FF200R12KT3_E with alternatives

Compare BSM200GB120DN2 with alternatives