FJN3301RTA vs MMUN2232LT1G feature comparison

FJN3301RTA onsemi

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MMUN2232LT1G onsemi

Buy Now Datasheet
Source Content uid FJN3301RTA MMUN2232LT1G
Pbfree Code Yes Yes
Part Life Cycle Code Obsolete Active
Package Description CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3
Manufacturer Package Code 135AR 318-08
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 1 Week 1 Week
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 20 15
JEDEC-95 Code TO-92 TO-236
JESD-30 Code O-PBCY-T3 R-PDSO-G3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.3 W 0.4 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 2
Part Package Code SOT-23
Pin Count 3
Moisture Sensitivity Level 1

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