FJV3103RMTF vs MMUN2212L feature comparison

FJV3103RMTF Fairchild Semiconductor Corporation

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MMUN2212L Motorola Mobility LLC

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP MOTOROLA INC
Part Package Code SOT-23 SOT-23
Pin Count 3 3
Manufacturer Package Code 3LD, SOT23, JEDEC TO-236, LOW PROFILE CASE 318-07
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 56 60
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 3 2
Package Description SMALL OUTLINE, R-PDSO-G3
JEDEC-95 Code TO-236AB
Power Dissipation Ambient-Max 0.2 W

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