FQA6N90C-F109
vs
FQA5N90
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
End Of Life
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
ROCHESTER ELECTRONICS LLC
|
| Part Package Code |
TO-3PN 3L
|
TO-3P
|
| Package Description |
ROHS COMPLIANT, TO-3PN, 3 PIN
|
TO-3P, 3 PIN
|
| Manufacturer Package Code |
340BZ
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Avalanche Energy Rating (Eas) |
650 mJ
|
660 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
900 V
|
900 V
|
| Drain Current-Max (ID) |
6 A
|
5.8 A
|
| Drain-source On Resistance-Max |
2.3 Ω
|
2.3 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
198 W
|
|
| Pulsed Drain Current-Max (IDM) |
24 A
|
23.2 A
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| Pin Count |
|
3
|
| Moisture Sensitivity Level |
|
NOT SPECIFIED
|
| Terminal Finish |
|
NOT SPECIFIED
|
|
|
|
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