FQB19N20TM vs STB18N20 feature comparison

FQB19N20TM Rochester Electronics LLC

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STB18N20 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC STMICROELECTRONICS
Part Package Code D2PAK D2PAK
Package Description D2PAK-3 D2PAK-2
Pin Count 3 3
Reach Compliance Code unknown not_compliant
Avalanche Energy Rating (Eas) 250 mJ 50 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 19.4 A 18 A
Drain-source On Resistance-Max 0.15 Ω 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 78 A 72 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 1
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Feedback Cap-Max (Crss) 70 pF
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Turn-on Time-Max (ton) 135 ns

Compare FQB19N20TM with alternatives

Compare STB18N20 with alternatives