FQB34N20LTM vs IRFS31N20DPBF feature comparison

FQB34N20LTM onsemi

Buy Now Datasheet

IRFS31N20DPBF Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Package Description D2PAK-3/2
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Factory Lead Time 22 Weeks
Samacsys Manufacturer onsemi Infineon
Avalanche Energy Rating (Eas) 640 mJ 420 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 31 A 31 A
Drain-source On Resistance-Max 0.08 Ω 0.082 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 67 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 3.13 W
Power Dissipation-Max (Abs) 180 W 200 W
Pulsed Drain Current-Max (IDM) 124 A 124 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 1100 ns
Turn-on Time-Max (ton) 1150 ns
Base Number Matches 1 1
Rohs Code Yes

Compare FQB34N20LTM with alternatives

Compare IRFS31N20DPBF with alternatives