FQB34N20TM-AM002 vs STH33N20 feature comparison

FQB34N20TM-AM002 onsemi

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STH33N20 STMicroelectronics

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Pbfree Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer ONSEMI STMICROELECTRONICS
Part Package Code TO-263 2L (D2PAK)
Package Description ROHS COMPLIANT, D2PAK-3 FLANGE MOUNT, R-PSFM-T3
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 640 mJ 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 31 A 33 A
Drain-source On Resistance-Max 0.075 Ω 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-218
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 180 W 180 W
Pulsed Drain Current-Max (IDM) 124 A 132 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code No
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 300 pF
Power Dissipation Ambient-Max 180 W
Turn-on Time-Max (ton) 215 ns

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