FQB7N60 vs STB9NK60ZDT4 feature comparison

FQB7N60 Fairchild Semiconductor Corporation

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STB9NK60ZDT4 STMicroelectronics

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP STMICROELECTRONICS
Part Package Code TO-263
Package Description SMALL OUTLINE, R-PSSO-G2 ROHS COMPLIANT, D2PAK-3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 580 mJ 235 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 7.4 A 7 A
Drain-source On Resistance-Max 1 Ω 0.95 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 3.13 W 104 W
Pulsed Drain Current-Max (IDM) 29.6 A 28 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Samacsys Manufacturer STMicroelectronics
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30

Compare FQB7N60 with alternatives

Compare STB9NK60ZDT4 with alternatives