FQB8N60CFTM
vs
STB3NK60ZT4
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
STMICROELECTRONICS
|
Package Description |
D2PAK-3
|
D2PAK-3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
160 mJ
|
150 mJ
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
6.26 A
|
2.4 A
|
Drain-source On Resistance-Max |
1.5 Ω
|
3.6 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
245
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
25 A
|
9.6 A
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
ECCN Code |
|
EAR99
|
Date Of Intro |
|
1980-01-04
|
Samacsys Manufacturer |
|
STMicroelectronics
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
45 W
|
|
|
|
Compare FQB8N60CFTM with alternatives
Compare STB3NK60ZT4 with alternatives