FQB9N50CTM
vs
FQB9N50
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
End Of Life
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
FAIRCHILD SEMICONDUCTOR CORP
|
Package Description |
D2PAK-3
|
SMALL OUTLINE, R-PSSO-G2
|
Manufacturer Package Code |
418AJ
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
4 Weeks
|
|
Samacsys Manufacturer |
onsemi
|
|
Avalanche Energy Rating (Eas) |
360 mJ
|
360 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
9 A
|
9 A
|
Drain-source On Resistance-Max |
0.8 Ω
|
0.73 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
245
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
135 W
|
147 W
|
Pulsed Drain Current-Max (IDM) |
36 A
|
36 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
7
|
Rohs Code |
|
No
|
Part Package Code |
|
TO-263
|
Pin Count |
|
3
|
JEDEC-95 Code |
|
TO-263AB
|
|
|
|
Compare FQB9N50CTM with alternatives
Compare FQB9N50 with alternatives