FQD12N20LTM vs SI7450DP-T1-GE3 feature comparison

FQD12N20LTM Fairchild Semiconductor Corporation

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SI7450DP-T1-GE3 Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP VISHAY INTERTECHNOLOGY INC
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 9 A 3.2 A
Drain-source On Resistance-Max 0.32 Ω 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-XDSO-C5
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 55 W 5.2 W
Pulsed Drain Current-Max (IDM) 36 A 40 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn) - annealed
Terminal Form GULL WING C BEND
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Factory Lead Time 13 Weeks
Samacsys Manufacturer Vishay

Compare FQD12N20LTM with alternatives

Compare SI7450DP-T1-GE3 with alternatives