FQD12N20LTM_NL vs FQD12N20LTM_F085 feature comparison

FQD12N20LTM_NL Fairchild Semiconductor Corporation

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FQD12N20LTM_F085 Fairchild Semiconductor Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2 ROHS COMPLIANT, DPAK-3
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 9 A 9 A
Drain-source On Resistance-Max 0.32 Ω 0.32 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A 36 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 55 W
Time@Peak Reflow Temperature-Max (s) 30

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