FQD24N08TF vs RFD14N06L feature comparison

FQD24N08TF Fairchild Semiconductor Corporation

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RFD14N06L Harris Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP HARRIS SEMICONDUCTOR
Part Package Code TO-252
Package Description DPAK-3 IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 230 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V 60 V
Drain Current-Max (ID) 19.6 A 14 A
Drain-source On Resistance-Max 0.06 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-251AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 50 W 40 W
Pulsed Drain Current-Max (IDM) 78.4 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Power Dissipation Ambient-Max 48 W
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns

Compare FQD24N08TF with alternatives

Compare RFD14N06L with alternatives