FQD4N20TM vs IRFR222 feature comparison

FQD4N20TM onsemi

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IRFR222 Samsung Semiconductor

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Pbfree Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer ONSEMI SAMSUNG SEMICONDUCTOR INC
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 52 mJ 50 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 3 A 3.8 A
Drain-source On Resistance-Max 1.4 Ω 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 30 W 42 W
Pulsed Drain Current-Max (IDM) 12 A 15 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Rohs Code No
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 42 W
Turn-off Time-Max (toff) 43 ns
Turn-on Time-Max (ton) 54 ns

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Compare IRFR222 with alternatives