FQT7N10L
vs
FQT7N10LTF_NL
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
FAIRCHILD SEMICONDUCTOR CORP
|
| Package Description |
SOT-223, 4 PIN
|
SMALL OUTLINE, R-PDSO-G4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Avalanche Energy Rating (Eas) |
50 mJ
|
50 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
1.7 A
|
1.7 A
|
| Drain-source On Resistance-Max |
0.38 Ω
|
0.38 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
15 pF
|
|
| JEDEC-95 Code |
TO-261AA
|
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
2 W
|
|
| Power Dissipation-Max (Abs) |
2 W
|
|
| Pulsed Drain Current-Max (IDM) |
6.8 A
|
6.8 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
155 ns
|
|
| Turn-on Time-Max (ton) |
240 ns
|
|
| Base Number Matches |
2
|
1
|
| Pin Count |
|
4
|
| JESD-609 Code |
|
e3
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare FQT7N10L with alternatives
Compare FQT7N10LTF_NL with alternatives