GAL16V8AS-25HB1 vs PAL12L6-2MJ883B feature comparison

GAL16V8AS-25HB1 STMicroelectronics

Buy Now Datasheet

PAL12L6-2MJ883B Monolithic Memories (RETIRED)

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS MONOLITHIC MEMORIES
Package Description DIP, DIP20,.3 DIP, DIP20,.3
Reach Compliance Code not_compliant unknown
HTS Code 8542.39.00.01 8542.39.00.01
Architecture PAL-TYPE PAL-TYPE
Clock Frequency-Max 28.5 MHz
JESD-30 Code R-PDIP-T20 R-XDIP-T20
JESD-609 Code e0 e0
Number of Inputs 18 12
Number of Outputs 8 6
Number of Product Terms 64 16
Number of Terminals 20 20
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Output Function MACROCELL COMBINATORIAL
Package Body Material PLASTIC/EPOXY CERAMIC
Package Code DIP DIP
Package Equivalence Code DIP20,.3 DIP20,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Programmable Logic Type EE PLD OT PLD
Propagation Delay 25 ns 80 ns
Qualification Status Not Qualified Not Qualified
Supply Voltage-Nom 5 V 5 V
Surface Mount NO NO
Technology CMOS TTL
Temperature Grade COMMERCIAL MILITARY
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
ECCN Code 3A001.A.2.C
Screening Level 38535Q/M;38534H;883B

Compare GAL16V8AS-25HB1 with alternatives

Compare PAL12L6-2MJ883B with alternatives