GP10M vs SF19 feature comparison

GP10M EIC Semiconductor Inc

Buy Now Datasheet

SF19 Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE SUPER FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 2.5 V
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Reference Standard TS-16949
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 5 µA 10 µA
Reverse Recovery Time-Max 3 µs 0.035 µs
Reverse Test Voltage 1000 V 1000 V
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Breakdown Voltage-Min 1000 V

Compare GP10M with alternatives

Compare SF19 with alternatives