GT50J121 vs HGTP12N60C3DR feature comparison

GT50J121 Toshiba America Electronic Components

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HGTP12N60C3DR Fairchild Semiconductor Corporation

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Pbfree Code No
Rohs Code No
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer TOSHIBA CORP FAIRCHILD SEMICONDUCTOR CORP
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH SPEED LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 50 A 24 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 240 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 430 ns 480 ns
Turn-on Time-Nom (ton) 240 ns 48 ns
Base Number Matches 1 3
JEDEC-95 Code TO-220AB

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