H7N0311LD vs 2SK2516-01L feature comparison

H7N0311LD Renesas Electronics Corporation

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2SK2516-01L Fuji Electric Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS TECHNOLOGY CORP COLLMER SEMICONDUCTOR INC
Package Description LDPAK-3 IN-LINE, R-PSIP-T3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 45 A 50 A
Drain-source On Resistance-Max 0.016 Ω 0.022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Power Dissipation Ambient-Max 80 W
Turn-off Time-Max (toff) 500 ns
Turn-on Time-Max (ton) 125 ns

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Compare 2SK2516-01L with alternatives