HGT1S12N60A4DS
vs
HGTG30N60B3D
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
HARRIS SEMICONDUCTOR
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
LOW CONDUCTION LOSS
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
54 A
|
60 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| JEDEC-95 Code |
TO-263AB
|
TO-247
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
POWER CONTROL
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
180 ns
|
|
| Turn-on Time-Nom (ton) |
33 ns
|
|
| Base Number Matches |
4
|
5
|
| Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
| ECCN Code |
|
EAR99
|
| Fall Time-Max (tf) |
|
250 ns
|
| Gate-Emitter Thr Voltage-Max |
|
6 V
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
208 W
|
|
|
|