HGT1S12N60B3S vs HGTG12N60C3D feature comparison

HGT1S12N60B3S Rochester Electronics LLC

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HGTG12N60C3D Harris Semiconductor

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Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC HARRIS SEMICONDUCTOR
Package Description PLASTIC PACKAGE-4
Pin Count 4
Reach Compliance Code unknown unknown
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS, HYPER FAST RECOVERY
Case Connection COLLECTOR
Collector Current-Max (IC) 27 A 24 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB TO-247
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 280 ns 270 ns
Turn-on Time-Nom (ton) 22 ns 14 ns
Base Number Matches 4 4
Rohs Code No
ECCN Code EAR99
Fall Time-Max (tf) 275000000000 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 104 W
Terminal Finish Tin/Lead (Sn/Pb)