HGT1S12N60B3S9A
vs
HGT1S12N60B3S
feature comparison
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
INTERSIL CORP
|
FAIRCHILD SEMICONDUCTOR CORP
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW CONDUCTION LOSS
|
LOW CONDUCTION LOSS
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
27 A
|
27 A
|
Collector-Emitter Voltage-Max |
600 V
|
600 V
|
Configuration |
SINGLE
|
SINGLE
|
JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
392 ns
|
392 ns
|
Turn-on Time-Nom (ton) |
45 ns
|
45 ns
|
Base Number Matches |
1
|
2
|
Rohs Code |
|
No
|
Gate-Emitter Thr Voltage-Max |
|
6 V
|
Gate-Emitter Voltage-Max |
|
20 V
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
104 W
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare HGT1S12N60B3S9A with alternatives
Compare HGT1S12N60B3S with alternatives