HGT1S12N60C3DR
vs
IXGH36N60A3D4
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
INTERSIL CORP
|
IXYS CORP
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
24 A
|
36 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Fall Time-Max (tf) |
400 ns
|
|
| Gate-Emitter Thr Voltage-Max |
7.5 V
|
5.5 V
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JESD-609 Code |
e0
|
e3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
104 W
|
220 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn)
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
TO-247AD
|
| Package Description |
|
TO-247, 3 PIN
|
| Pin Count |
|
3
|
| Additional Feature |
|
LOW CONDUCTION LOSS
|
| Case Connection |
|
COLLECTOR
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| JEDEC-95 Code |
|
TO-247AD
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
| Transistor Application |
|
POWER CONTROL
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Nom (toff) |
|
1000 ns
|
| Turn-on Time-Nom (ton) |
|
43 ns
|
|
|
|
Compare IXGH36N60A3D4 with alternatives