HGTD3N60C3 vs HGTD3N60B3 feature comparison

HGTD3N60C3 Rochester Electronics LLC

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HGTD3N60B3 Harris Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC HARRIS SEMICONDUCTOR
Reach Compliance Code unknown unknown
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 6 A 7 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-251AA TO-251AA
JESD-30 Code R-PSIP-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 325 ns 220 ns
Turn-on Time-Nom (ton) 5 ns 16 ns
Base Number Matches 3 3
Rohs Code No
Package Description PLASTIC PACKAGE-3
ECCN Code EAR99
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 33 W
Terminal Finish TIN LEAD

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