HGTG24N60D1D vs HGTD7N60C3S9A feature comparison

HGTG24N60D1D Harris Semiconductor

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HGTD7N60C3S9A onsemi

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Rohs Code No
Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer HARRIS SEMICONDUCTOR ONSEMI
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 40 A 14 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 600 ns 275 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 25 V 20 V
JEDEC-95 Code TO-247 TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W 60 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 900 ns 675 ns
Turn-off Time-Nom (toff) 700 ns 490 ns
Turn-on Time-Nom (ton) 100 ns 20 ns
VCEsat-Max 2.3 V 2 V
Base Number Matches 1 1
Pbfree Code Yes
Package Description TO-252AA, 3 PIN
Manufacturer Package Code 369AS
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature RC-IGBT
Moisture Sensitivity Level 1
Operating Temperature-Min -40 °C
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare HGTG24N60D1D with alternatives

Compare HGTD7N60C3S9A with alternatives