HGTG24N60D1D vs IRG4BC20W-STRLPBF feature comparison

HGTG24N60D1D Harris Semiconductor

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IRG4BC20W-STRLPBF Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 40 A 13 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 600 ns 96 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 25 V 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W 60 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 900 ns
Turn-off Time-Nom (toff) 700 ns 300 ns
Turn-on Time-Nom (ton) 100 ns 36 ns
VCEsat-Max 2.3 V
Base Number Matches 1 1
Package Description SMALL OUTLINE, R-PSSO-G2
Additional Feature LOW CONDUCTION LOSS
Moisture Sensitivity Level 1

Compare HGTG24N60D1D with alternatives

Compare IRG4BC20W-STRLPBF with alternatives