HGTG40N60B3 vs HGTG20N60B3 feature comparison

HGTG40N60B3 Harris Semiconductor

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HGTG20N60B3 Intersil Corporation

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Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer HARRIS SEMICONDUCTOR INTERSIL CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 70 A 40 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 200 ns 200 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-247 TO-247
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 290 W
Power Dissipation-Max (Abs) 290 W 165 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 435 ns
Turn-off Time-Nom (toff) 350 ns 360 ns
VCEsat-Max 2 V
Base Number Matches 4 5
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Turn-on Time-Nom (ton) 45 ns

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